YOUR MEMORY SOLUTIONS PROVIDER SINCE 1998

Our Products

DDR3 Module

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DDR3 Unbuffered DIMM

Features
  • VDDQ = 1.5V (+/-) 0.075V
  • 8 independent internal bank
  • Programmable /CAS Latency : (4), 5, 6, 7, 8, 9, 10, (11 for high density only)
  • Programmable /CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600)
  • 8-bit pre-fetch
  • Bi-directional Differential Data-Strobe
  • Internal(self) calibration
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE > 95°C
  • All of Lead-free products are compliant for RoHS